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| Year of Publication |
2013
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| Journal |
Semiconductor Science and Technology
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| Volume |
28
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| Number of Pages |
085005
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| Download citation |
Publications
Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic
Professor of Physics
Citation: 1.Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology. 2013;28:085005.
In: Semiconductor Science and Technology
Published by: IOP Publishing , 2013
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Cited by: