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| Year of Publication |
2016
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| Journal |
IEEE Transactions on Electron Devices 63 (12), 4899-4906, 2016
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| Volume |
63
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| Number of Pages |
4899–4906
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| Download citation |
Publications
Transport phenomenon in boron–GroupV linear atomic chains under tensile stress for nanoscale devices and interconnects: first principles analysis
Professor of Physics
Citation: 1.Transport phenomenon in boron–GroupV linear atomic chains under tensile stress for nanoscale devices and interconnects: first principles analysis. IEEE Transactions on Electron Devices 63 (12), 4899-4906, 2016. 2016;63:4899–4906.
In: IEEE Transactions on Electron Devices 63 (12), 4899-4906, 2016
Published by: IEEE , 2016
google Scholar link: https://scholar.google.com/citations?view_op=view_citation&hl=en&user=pq1RqksAA…
Cited by: 8