2011

Ion mobility study of the mechanism of the gas phase thermal polymerization of styrene and the structures of the early oligomers

ealsharaeh, 237, Journal Article, , Ion mobility study of the mechanism of the gas phase thermal polymerization of styrene and the structures of the early oligomers. (2011). Polymer, 52, 5551–5559.

2011

Growth Mechanisms of Complex Organics in the Gas Phase and on Metal Nanoparticles Generated by a Laser Vaporization Process

asoliman, 266, Journal Article, , Growth Mechanisms of Complex Organics in the Gas Phase and on Metal Nanoparticles Generated by a Laser Vaporization Process. (2011).

2011

Evaluating removal of metribuzin pesticide from contaminated groundwater using an electrochemical reactor combined with ultraviolet oxidation

mgoosen, 582, Journal Article, , Evaluating removal of metribuzin pesticide from contaminated groundwater using an electrochemical reactor combined with ultraviolet oxidation. (2011). Desalination 270 (1-3), 84-89, 2011.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.

2011

Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications

sosaid, 650, Journal Article, , Amin, B., Ahmad, I., Maqbool, M., Goumri-Said, S., & Ahmad, R. (2011). Ab initio study of the bandgap engineering of Al1- xGaxN for optoelectronic applications. Journal of Applied Physics, 109.