2015

Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se)

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., Minar, J., Khan, W., Din, H. U., Khenata, R., … Goumri-Said, S. (2015). Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se). Semiconductor Science and Technology, 30, 105018.

2015

Finite element modeling of sliding wear in a composite alloy using a free-mesh

mgoosen, 582, Journal Article, , Finite element modeling of sliding wear in a composite alloy using a free-mesh. (2015). Journal of Tribology 137 (3), 031605, 2015.

2015

Structural stability for the Morris-Lecar neuron model

statar, 649, Journal Article, , Structural stability for the Morris-Lecar neuron model. (2015). , Applied Mathematics and Computation, 270(2015), 261-268.

2015

A novel approach for the synthesis of tin antimony sulphide thin films for photovoltaic application

sosaid, 650, Journal Article, , A novel approach for the synthesis of tin antimony sulphide thin films for photovoltaic application. (2015). Solar Energy, 113, 25–33.

2015

Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

sosaid, 650, Journal Article, , Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. (2015). Materials Science in Semiconductor Processing 39, 606-613, 2015, 39, 606–613.

2015

DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion

sosaid, 650, Journal Article, , Khan, W., Azam, S., Shah, F. A., & Goumri-Said, S. (2015). DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion. Solid State Sciences, 48, 244-250.

2015

DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion

sosaid, 650, Journal Article, , Khan, W., Azam, S., Shah, F. A., & Goumri-Said, S. (2015). DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion. Solid State Sciences, 48, 244-250.

2015

DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion

sosaid, 650, Journal Article, , Khan, W., Azam, S., Shah, F. A., & Goumri-Said, S. (2015). DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion. Solid State Sciences, 48, 244-250.

2015

Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se)

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., Minar, J., Khan, W., Din, H. U., Khenata, R., … Goumri-Said, S. (2015). Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se). Semiconductor Science and Technology, 30, 105018.

2015

Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se)

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., Minar, J., Khan, W., Din, H. U., Khenata, R., … Goumri-Said, S. (2015). Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se). Semiconductor Science and Technology, 30, 105018.