2015

Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., & Goumri-Said, S. (2015). Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science in Semiconductor Processing, 39, 606-613.

2015

Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., & Goumri-Said, S. (2015). Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science in Semiconductor Processing, 39, 606-613.

2015

Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., & Goumri-Said, S. (2015). Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science in Semiconductor Processing, 39, 606-613.

2015

Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., & Goumri-Said, S. (2015). Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science in Semiconductor Processing, 39, 606-613.

2015

Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., & Goumri-Said, S. (2015). Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science in Semiconductor Processing, 39, 606-613.

2015

Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., & Goumri-Said, S. (2015). Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science in Semiconductor Processing, 39, 606-613.

2015

Exploring the electronic structure and optical properties of the quaternary selenide compound, Ba4Ga4SnSe12: For photovoltaic applications

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., & Goumri-Said, S. (2015). Exploring the electronic structure and optical properties of the quaternary selenide compound, Ba4Ga4SnSe12: For photovoltaic applications. Journal of Solid State Chemistry, 229, 260-265.

2015

Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., & Goumri-Said, S. (2015). Modified Becke—Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science in Semiconductor Processing, 39, 606-613.

2015

Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba (Si, Al) 5 (O, N) 8 compounds for light-emitting diodes devices

sosaid, 650, Journal Article, , Azam, S., Khan, S. A., Minar, J., & Goumri-Said, S. (2015). Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba (Si, Al) 5 (O, N) 8 compounds for light-emitting diodes devices. Current Applied Physics, 15, 1160-1167.

2015

Broadband temperature-dependent dielectric properties of polycrystalline vanadium dioxide thin films

ahendaoui, 973, Journal Article, , Broadband temperature-dependent dielectric properties of polycrystalline vanadium dioxide thin films. (2015). 2015 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2015.